文献
J-GLOBAL ID:201802240501673539
整理番号:18A1066905
リセス表面の熱処理によるGaN-MOSFETのチャネル移動度の改善【JST・京大機械翻訳】
Improvement of Channel Mobility of GaN-MOSFETs With Thermal Treatment for Recess Surface
著者 (8件):
Uesugi Kenjiro
(Corporate Research & Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwaiku, Kawasaki 212-8582, Japan)
,
Shindome Aya
(Corporate Research & Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwaiku, Kawasaki 212-8582, Japan)
,
Kajiwara Yosuke
(Corporate Research & Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwaiku, Kawasaki 212-8582, Japan)
,
Yonehara Toshiya
(Corporate Research & Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwaiku, Kawasaki 212-8582, Japan)
,
Kato Daimotsu
(Corporate Research & Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwaiku, Kawasaki 212-8582, Japan)
,
Hikosaka Toshiki
(Corporate Research & Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwaiku, Kawasaki 212-8582, Japan)
,
Kuraguchi Masahiko
(Corporate Research & Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwaiku, Kawasaki 212-8582, Japan)
,
Nunoue Shinya
(Corporate Research & Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwaiku, Kawasaki 212-8582, Japan)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
215
号:
10
ページ:
e1700511
発行年:
2018年
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)