文献
J-GLOBAL ID:201802241528472848
整理番号:18A0423278
4H SiC金属-酸化物-半導体電界効果トランジスタにおけるバイアス温度不安定性:電気的に検出した磁気共鳴から得られた洞察【Powered by NICT】
Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance
著者 (5件):
Lenahan P.M.
(Dept. Engineering Science and Mechanics, The Pennsylvania State University, 212 Earth & Engineering Sciences Bldg., University Park, PA 16802, United States)
,
Lenahan P.M.
(Inter-College Graduate Degree Program in Materials Science, The Pennsylvania State University, 212 Earth & Engineering Sciences Bldg., University Park, PA 16802, United States)
,
Anders M.A.
(Inter-College Graduate Degree Program in Materials Science, The Pennsylvania State University, 212 Earth & Engineering Sciences Bldg., University Park, PA 16802, United States)
,
Waskiewicz R.J.
(Dept. Engineering Science and Mechanics, The Pennsylvania State University, 212 Earth & Engineering Sciences Bldg., University Park, PA 16802, United States)
,
Lelis A.J.
(United States Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, United States)
資料名:
Microelectronics Reliability
(Microelectronics Reliability)
巻:
81
ページ:
1-6
発行年:
2018年
JST資料番号:
C0530A
ISSN:
0026-2714
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)