文献
J-GLOBAL ID:201802241627240277
整理番号:18A0799018
InAs/GaAsN/GaAs結合量子ドットの垂直歪誘起ドットサイズ均一性と熱安定性【JST・京大機械翻訳】
Vertical strain-induced dot size uniformity and thermal stability of InAs/GaAsN/GaAs coupled quantum dots
著者 (7件):
Biswas Mahitosh
(Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, 400076, India)
,
Singh Sandeep
(Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, 400076, India)
,
Balgarkashi Akshay
(Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, 400076, India)
,
Makkar Roshan
(Photonics Division, Society for Applied Microwave Engineering Electronics and Research, IIT Powai Campus, Mumbai, 400076, India)
,
Bhatnagar Anuj
(Photonics Division, Society for Applied Microwave Engineering Electronics and Research, IIT Powai Campus, Mumbai, 400076, India)
,
Sreedhara Sheshadri
(Department of Mechanical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, 400076, India)
,
Chakrabarti Subhananda
(Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, 400076, India)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
748
ページ:
601-607
発行年:
2018年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)