文献
J-GLOBAL ID:201802241821944925
整理番号:18A0511628
Si基板と影響基板の熱電輸送特性へのFe_2SiO_4薄膜の形成【Powered by NICT】
Formation of Fe2SiO4 thin films on Si substrates and influence of substrate to its thermoelectric transport properties
著者 (6件):
Choi Jeongyong
(Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea)
,
Nguyen Van Quang
(Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea)
,
Duong Van Thiet
(Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea)
,
Shin Yooleemi
(Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea)
,
Duong Anh Tuan
(Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea)
,
Cho Sunglae
(Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea)
資料名:
Physica B. Condensed Matter
(Physica B. Condensed Matter)
巻:
532
ページ:
80-83
発行年:
2018年
JST資料番号:
H0676B
ISSN:
0921-4526
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)