文献
J-GLOBAL ID:201802242447746375
整理番号:18A1903070
Bi_1/2Na_1/2TiO_3ベースのリラクサ強誘電体における三状態強誘電メモリと歪メモリ【JST・京大機械翻訳】
Tristate ferroelectric memory and strain memory in Bi1/2Na1/2TiO3-based relaxor ferroelectrics
著者 (6件):
Zhang Huazhang
(State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, and School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, People’s Republic of China)
,
Zhou Jing
(State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, and School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, People’s Republic of China)
,
Shen Jie
(State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, and School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, People’s Republic of China)
,
Wang Tianheng
(State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, and School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, People’s Republic of China)
,
Xie Dandan
(State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, and School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, People’s Republic of China)
,
Chen Wen
(State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, and School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, People’s Republic of China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
113
号:
15
ページ:
152902-152902-5
発行年:
2018年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)