文献
J-GLOBAL ID:201802242785854083
整理番号:18A1942098
パワーLDMOSにおけるホットキャリア劣化:ドレインバイアス依存性と寿命評価【JST・京大機械翻訳】
Hot-Carrier Degradation in Power LDMOS: Drain Bias Dependence and Lifetime Evaluation
著者 (8件):
Tallarico Andrea Natale
(Department of Electrical, Electronic, and Information Engineering, Advanced Research Center on Electronic System, University of Bologna, Cesena, Italy)
,
Reggiani Susanna
(Department of Electrical, Electronic, and Information Engineering, Advanced Research Center on Electronic System, University of Bologna, Cesena, Italy)
,
Depetro Riccardo
(Technology Research and Development, STMicroelectronics, Agrate Brianza, Italy)
,
Manzini Stefano
(Technology Research and Development, STMicroelectronics, Agrate Brianza, Italy)
,
Torti Andrea Mario
(Technology Research and Development, STMicroelectronics, Agrate Brianza, Italy)
,
Croce Giuseppe
(Technology Research and Development, STMicroelectronics, Agrate Brianza, Italy)
,
Sangiorgi Enrico
(Department of Electrical, Electronic, and Information Engineering, Advanced Research Center on Electronic System, University of Bologna, Cesena, Italy)
,
Fiegna Claudio
(Department of Electrical, Electronic, and Information Engineering, Advanced Research Center on Electronic System, University of Bologna, Cesena, Italy)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
65
号:
11
ページ:
5195-5198
発行年:
2018年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)