文献
J-GLOBAL ID:201802242953629561
整理番号:18A0942137
Hf_0.5Zr_0.5O_2強誘電体FET不揮発性メモリ性能における中間層の重要な役割【JST・京大機械翻訳】
Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance
著者 (9件):
Ni Kai
(Electrical Engineering Department, University of Notre Dame, Notre Dame, IN, USA)
,
Sharma Pankaj
(Electrical Engineering Department, University of Notre Dame, Notre Dame, IN, USA)
,
Zhang Jianchi
(Electrical Engineering Department, University of Notre Dame, Notre Dame, IN, USA)
,
Jerry Matthew
(Electrical Engineering Department, University of Notre Dame, Notre Dame, IN, USA)
,
Smith Jeffery A.
(Electrical Engineering Department, University of Notre Dame, Notre Dame, IN, USA)
,
Tapily Kandabara
(LLC, TEL Technology Center, America, Albany, NY, USA)
,
Clark Robert
(LLC, TEL Technology Center, America, Albany, NY, USA)
,
Mahapatra Souvik
(Electrical Engineering Department, IIT Bombay, Mumbai, India)
,
Datta Suman
(Electrical Engineering Department, University of Notre Dame, Notre Dame, IN, USA)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
65
号:
6
ページ:
2461-2469
発行年:
2018年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)