文献
J-GLOBAL ID:201802242999869850
整理番号:18A0129362
剥離の過程におけるβSi_3N_4/ダイヤモンド界面の原子構造とポテンシャルエネルギー:第一原理研究【Powered by NICT】
Atomic structure and potential energy of β-Si3N4/diamond interface in the process of detachment: A first-principles study
著者 (8件):
Chen Naichao
(School Energy and Mechanical Engineering, Shanghai University of Electric Power, Shanghai, 200090, China)
,
Chen Naichao
(Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power, Shanghai, 200090, China)
,
Chen Yingchao
(School Energy and Mechanical Engineering, Shanghai University of Electric Power, Shanghai, 200090, China)
,
Ai Jun
(School Energy and Mechanical Engineering, Shanghai University of Electric Power, Shanghai, 200090, China)
,
Li Cheng
(School Energy and Mechanical Engineering, Shanghai University of Electric Power, Shanghai, 200090, China)
,
He Ping
(School Energy and Mechanical Engineering, Shanghai University of Electric Power, Shanghai, 200090, China)
,
Ren Jianxing
(School Energy and Mechanical Engineering, Shanghai University of Electric Power, Shanghai, 200090, China)
,
Zhu Quanjun
(Global Energy Interconnection Research Institute, Beijing, 102211, China)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
434
ページ:
211-214
発行年:
2018年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)