文献
J-GLOBAL ID:201802243696950422
整理番号:18A0400235
グラフェン電界効果トランジスタの電子的性質に及ぼす歪誘起変調の研究【Powered by NICT】
Investigation of strain-induced modulation on electronic properties of graphene field effect transistor
著者 (5件):
Dong Jinyao
(School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, PR China)
,
Liu Shuai
(School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, PR China)
,
Fu Yongzhong
(School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, PR China)
,
Wang Quan
(School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, PR China)
,
Wang Quan
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, PR China)
資料名:
Physics Letters. A
(Physics Letters. A)
巻:
381
号:
4
ページ:
292-297
発行年:
2017年
JST資料番号:
C0600B
ISSN:
0375-9601
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)