文献
J-GLOBAL ID:201802244609870770
整理番号:18A1028313
低温PECVDによるGaAs上の結晶シリコンの直接成長:III-V/Siタンデム電池のためのハイブリッドトンネル接合に向けて【JST・京大機械翻訳】
Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells
著者 (10件):
Hamon G.
(TOTAL New Energies, 24 cours Michelet, 92069 Paris La De ́fense Cedex, France)
,
Decobert J.
(III-V lab, route de Nozay, 91460 Marcoussis, France)
,
Vaissiere N.
(LPICM, CNRS, Ecole Polytechnique, Universite ́ Paris-Saclay, 91128, Palaiseau, France)
,
Lachaume R.
(GeePs; CNRS UMR 8507; CentraleSupe ́lec; Univ Paris-Sud; Sorbonne Universite ́s-UPMC Univ Paris 06; 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex, France)
,
Cariou R.
(LPICM, CNRS, Ecole Polytechnique, Universite ́ Paris-Saclay, 91128, Palaiseau, France)
,
Chen W.
(LPICM, CNRS, Ecole Polytechnique, Universite ́ Paris-Saclay, 91128, Palaiseau, France)
,
Alvarez J.
(GeePs; CNRS UMR 8507; CentraleSupe ́lec; Univ Paris-Sud; Sorbonne Universite ́s-UPMC Univ Paris 06; 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex, France)
,
Habka N.
(TOTAL New Energies, 24 cours Michelet, 92069 Paris La De ́fense Cedex, France)
,
Kleider J.P.
(GeePs; CNRS UMR 8507; CentraleSupe ́lec; Univ Paris-Sud; Sorbonne Universite ́s-UPMC Univ Paris 06; 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex, France)
,
i Cabarrocas P. Roca
(LPICM, CNRS, Ecole Polytechnique, Universite ́ Paris-Saclay, 91128, Palaiseau, France)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
PVSC
ページ:
1-3
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)