文献
J-GLOBAL ID:201802247210805726
整理番号:18A1675284
軸上(001)GaP/Si上に成長させたInAs/InGaAs量子ドットp-i-nフォトダイオードの低暗電流10Gbit/s動作【JST・京大機械翻訳】
Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si
著者 (9件):
Inoue D.
(Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA)
,
Wan Y.
(Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA)
,
Jung D.
(Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA)
,
Norman J.
(Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA)
,
Shang C.
(Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA)
,
Nishiyama N.
(Institute of Innovative Research, Tokyo Institute of Technology, Tokyo 152-8552, Japan)
,
Arai S.
(Institute of Innovative Research, Tokyo Institute of Technology, Tokyo 152-8552, Japan)
,
Gossard A. C.
(Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA)
,
Bowers J. E.
(Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
113
号:
9
ページ:
093506-093506-4
発行年:
2018年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)