文献
J-GLOBAL ID:201802247375903023
整理番号:18A0514083
4ガリウムインジウムプローブを用いて研究した単分子層ペンタセン電界効果トランジスタに及ぼす初期ガス暴露の影響【Powered by NICT】
Initial gas exposure effects on monolayer pentacene field-effect transistor studied using four gallium indium probes
著者 (6件):
Yoshimoto Shinya
(The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan)
,
Miyahara Ryosuke
(The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan)
,
Yoshikura Yuki
(The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan)
,
Tang Jiayi
(The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan)
,
Mukai Kozo
(The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan)
,
Yoshinobu Jun
(The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan)
資料名:
Organic Electronics
(Organic Electronics)
巻:
54
ページ:
34-39
発行年:
2018年
JST資料番号:
W1352A
ISSN:
1566-1199
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)