文献
J-GLOBAL ID:201802247545589935
整理番号:18A0967782
3nmまでの超薄領域における強誘電性HfO_2の発展【JST・京大機械翻訳】
Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm
著者 (6件):
Tian Xuan
(Department of Materials Engineering, The University of Tokyo, Hongo, Tokyo 113-8656, Japan)
,
Shibayama Shigehisa
(Department of Materials Engineering, The University of Tokyo, Hongo, Tokyo 113-8656, Japan)
,
Nishimura Tomonori
(Department of Materials Engineering, The University of Tokyo, Hongo, Tokyo 113-8656, Japan)
,
Yajima Takeaki
(Department of Materials Engineering, The University of Tokyo, Hongo, Tokyo 113-8656, Japan)
,
Migita Shinji
(National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8569, Japan)
,
Toriumi Akira
(Department of Materials Engineering, The University of Tokyo, Hongo, Tokyo 113-8656, Japan)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
112
号:
10
ページ:
102902-102902-5
発行年:
2018年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)