文献
J-GLOBAL ID:201802248602557752
整理番号:18A1805332
SiO_2/SiC(4H)構造における界面組成と物理的応力に及ぼす窒素不動態化の影響【JST・京大機械翻訳】
Effect of nitrogen passivation on interface composition and physical stress in SiO2/SiC(4H) structures
著者 (11件):
Li Xiuyan
(National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People’s Republic of China)
,
Lee Sang Soo
(Chemical Science and Engineering Division, Argonne National Laboratory, Lemont, Illinois 60439, USA)
,
Li Mengjun
(Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, New Jersey 08854, USA)
,
Ermakov Alexei
(Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, New Jersey 08854, USA)
,
Medina-Ramos Jonnathan
(Chemical Science and Engineering Division, Argonne National Laboratory, Lemont, Illinois 60439, USA)
,
Fister Timothy T.
(Chemical Science and Engineering Division, Argonne National Laboratory, Lemont, Illinois 60439, USA)
,
Amarasinghe Voshadhi
(Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, New Jersey 08854, USA)
,
Gustafsson Torgny
(Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA)
,
Garfunkel Eric
(Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, New Jersey 08854, USA)
,
Fenter Paul
(Chemical Science and Engineering Division, Argonne National Laboratory, Lemont, Illinois 60439, USA)
,
Feldman Leonard C.
(Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
113
号:
13
ページ:
131601-131601-4
発行年:
2018年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)