文献
J-GLOBAL ID:201802249142077221
整理番号:18A0423300
マルチV_Tゲートスタックを有する高k/金属ゲートFinFET技術を用いた10nm SRAMのBTI特性とその挙動の研究【Powered by NICT】
Investigation of BTI characteristics and its behavior on 10nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack
著者 (7件):
Jin Minjung
(Foundry Business, Samsung Electronics, Gi-Heung 446-771, Republic of Korea)
,
Kim Kangjung
(Foundry Business, Samsung Electronics, Gi-Heung 446-771, Republic of Korea)
,
Kim Yoohwan
(Foundry Business, Samsung Electronics, Gi-Heung 446-771, Republic of Korea)
,
Shim Hyewon
(Foundry Business, Samsung Electronics, Gi-Heung 446-771, Republic of Korea)
,
Kim Jinju
(Foundry Business, Samsung Electronics, Gi-Heung 446-771, Republic of Korea)
,
Kim Gunrae
(Foundry Business, Samsung Electronics, Gi-Heung 446-771, Republic of Korea)
,
Pae Sangwoo
(Foundry Business, Samsung Electronics, Gi-Heung 446-771, Republic of Korea)
資料名:
Microelectronics Reliability
(Microelectronics Reliability)
巻:
81
ページ:
201-209
発行年:
2018年
JST資料番号:
C0530A
ISSN:
0026-2714
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)