文献
J-GLOBAL ID:201802249350078701
整理番号:18A0129208
原子層蒸着したAl_2O_3/4H-SiCの改善された界面および電気的性質【Powered by NICT】
Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC
著者 (9件):
Suvanam Sethu Saveda
(School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden)
,
Usman Muhammed
(School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden)
,
Usman Muhammed
(Experimental Physics Laboratories, National Centre for Physics, Quaid-i-Azam University, Islamabad, Pakistan)
,
Martin David
(School of Engineering, University of Warwick, Coventry, CV4 7 AL, United Kingdom)
,
Yazdi Milad. G.
(School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden)
,
Linnarsson Margareta
(School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden)
,
Tempez Agnes
(Horiba France SAS, CS 45002, 91120, Palaiseau, France)
,
Gotelid Mats
(School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden)
,
Hallen Anders
(School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
433
ページ:
108-115
発行年:
2018年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)