文献
J-GLOBAL ID:201802249391234027
整理番号:18A0194174
16nmバルクFinFET技術におけるフリップフロップの重イオン誘起シングルイベント応答の周波数依存性【Powered by NICT】
Frequency Dependence of Heavy-Ion-Induced Single-Event Responses of Flip-Flops in a 16-nm Bulk FinFET Technology
著者 (6件):
Zhang H.
(Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA)
,
Jiang H.
(Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA)
,
Bhuva B. L.
(Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA)
,
Kauppila J. S.
(Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA)
,
Holman W. T.
(Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA)
,
Massengill L. W.
(Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA)
資料名:
IEEE Transactions on Nuclear Science
(IEEE Transactions on Nuclear Science)
巻:
65
号:
1
ページ:
413-417
発行年:
2018年
JST資料番号:
C0235A
ISSN:
0018-9499
CODEN:
IETNAE
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)