文献
J-GLOBAL ID:201802249992309881
整理番号:18A0426481
増強されたオプトエレクトロニクス特性を有する結晶化InBiS_3薄膜【Powered by NICT】
Crystallized InBiS3 thin films with enhanced optoelectronic properties
著者 (9件):
Ali N.
(Department of Physics, Faculty of Science, University Technology Malaysia, Skudai, 81310 Johor, Malaysia)
,
Ali N.
(Department of Physics, GPG Jehanzeb College, Saidu Sharif Swat, 19130, KPK, Pakistan)
,
Hussain Arshad
(Department of Physics, Faculty of Science, University Technology Malaysia, Skudai, 81310 Johor, Malaysia)
,
Hussain Arshad
(Faculty of Engineering and Environment, Northumbria University, Newcastle upon Tyne, NE1 8ST, UK)
,
Ahmed R.
(Department of Physics, Faculty of Science, University Technology Malaysia, Skudai, 81310 Johor, Malaysia)
,
Ahmed R.
(Centre for High Energy Physics, University of the Punjab, Quid-e-Azam Campus, University of the Punjab, 54590-Lahore, Pakistan)
,
Omar M. Firdaus Bin
(Department of Physics, Faculty of Science, University Technology Malaysia, Skudai, 81310 Johor, Malaysia)
,
Sultan M.
(Nanoscience and Technology Department, National Centre for Physics, Islamabad, 44000 Pakistan)
,
Fu Yong Qing
(Faculty of Engineering and Environment, Northumbria University, Newcastle upon Tyne, NE1 8ST, UK)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
436
ページ:
293-301
発行年:
2018年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)