文献
J-GLOBAL ID:201802250321967945
整理番号:18A1506450
Ge/Siヘテロ接合トンネル電界効果トランジスタの電気特性に及ぼすGe源中の不純物濃度の影響【JST・京大機械翻訳】
Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors
著者 (6件):
Bae Tae-Eon
(Department of Electrical Engineering and Information Systems, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan)
,
Kato Kimihiko
(Department of Electrical Engineering and Information Systems, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan)
,
Suzuki Ryota
(Department of Electrical Engineering and Information Systems, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan)
,
Nakane Ryosho
(Department of Electrical Engineering and Information Systems, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan)
,
Takenaka Mitsuru
(Department of Electrical Engineering and Information Systems, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan)
,
Takagi Shinichi
(Department of Electrical Engineering and Information Systems, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
113
号:
6
ページ:
062103-062103-4
発行年:
2018年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)