文献
J-GLOBAL ID:201802250720827279
整理番号:18A1597007
Cu-CNT複合材料相互接続におけるエレクトロマイグレーションの理解:多重スケール電熱シミュレーション研究【JST・京大機械翻訳】
Understanding Electromigration in Cu-CNT Composite Interconnects: A Multiscale Electrothermal Simulation Study
著者 (21件):
Lee Jaehyun
(School of Engineering, University of Glasgow, Glasgow, U.K.)
,
Berrada Salim
(School of Engineering, University of Glasgow, Glasgow, U.K.)
,
Adamu-Lema Fikru
(School of Engineering, University of Glasgow, Glasgow, U.K.)
,
Nagy Nicole
(Center Nanoelectronic Technologies Department, Fraunhofer Institute for Photonic Microsystems, Dresden, Germany)
,
Georgiev Vihar P.
(School of Engineering, University of Glasgow, Glasgow, U.K.)
,
Sadi Toufik
(Department of Neuroscience and Biomedical Engineering, Aalto University, Aalto, Finland)
,
Liang Jie
(Microelectronics Department, CNRS-LIRMM, Montpellier, France)
,
Ramos Raphael
(Nanomaterials Department, CEA-LITEN, University of Grenoble Alpes, Grenoble, France)
,
Carrillo-Nunez Hamilton
(School of Engineering, University of Glasgow, Glasgow, U.K.)
,
Kalita Dipankar
(Nanomaterials Department, CEA-INAC, University of Grenoble Alpes, Grenoble, France)
,
Lilienthal Katharina
(Center Nanoelectronic Technologies Department, Fraunhofer Institute for Photonic Microsystems, Dresden, Germany)
,
Wislicenus Marcus
(Center Nanoelectronic Technologies Department, Fraunhofer Institute for Photonic Microsystems, Dresden, Germany)
,
Pandey Reeturaj
(Microelectronics Department, CNRS-LIRMM, Montpellier, France)
,
Chen Bingan
(Nanoinstruments Department, AIXTRON Ltd., Cambridge, U.K.)
,
Teo Kenneth B. K.
(Nanoinstruments Department, AIXTRON Ltd., Cambridge, U.K.)
,
Goncalves Goncalo
(Nanoinstruments Department, AIXTRON Ltd., Cambridge, U.K.)
,
Okuno Hanako
(Nanomaterials Department, CEA-INAC, University of Grenoble Alpes, Grenoble, France)
,
Uhlig Benjamin
(Center Nanoelectronic Technologies Department, Fraunhofer Institute for Photonic Microsystems, Dresden, Germany)
,
Todri-Sanial Aida
(Microelectronics Department, CNRS-LIRMM, Montpellier, France)
,
Dijon Jean
(Nanomaterials Department, CEA-LITEN, University of Grenoble Alpes, Grenoble, France)
,
Asenov Asen
(School of Engineering, University of Glasgow, Glasgow, U.K.)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
65
号:
9
ページ:
3884-3892
発行年:
2018年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)