文献
J-GLOBAL ID:201802251271022443
整理番号:18A1028262
シリコン太陽光発電における有限対無限源エミッタ:遷移金属ゲッタリングへの影響【JST・京大機械翻訳】
Finite-vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering
著者 (14件):
Laine Hannu S.
(Department of Micro- and Nanosciences, Aalto University, 02150 Espoo, Finland)
,
Vahanissi Ville
(Department of Micro- and Nanosciences, Aalto University, 02150 Espoo, Finland)
,
Liu Zhengjun
(Department of Micro- and Nanosciences, Aalto University, 02150 Espoo, Finland)
,
Huang Haibing
(Department of Micro- and Nanosciences, Aalto University, 02150 Espoo, Finland)
,
Magana Ernesto
(Department of Nanoengineering, University of California, San Diego, La Jolla, CA 92093)
,
Morishige Ashley E.
(Massachusetts Institute of Technology, Cambridge, MA 02139)
,
Khelifati Nabil
(Research Center in Semiconductor Technology for the Energetic (CRTSE), 16038 Algiers, Algeria)
,
Husein Sebastian
(Arizona State University, Tempe, AZ 85287)
,
Lai Barry
(Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439)
,
Bertoni Mariana
(Arizona State University, Tempe, AZ 85287)
,
Bouhafs Djoudi
(Research Center in Semiconductor Technology for the Energetic (CRTSE), 16038 Algiers, Algeria)
,
Buonassisi Tonio
(Massachusetts Institute of Technology, Cambridge, MA 02139)
,
Fenning David P.
(Department of Nanoengineering, University of California, San Diego, La Jolla, CA 92093)
,
Savin Hele
(Department of Micro- and Nanosciences, Aalto University, 02150 Espoo, Finland)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
PVSC
ページ:
1-3
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)