文献
J-GLOBAL ID:201802251300922969
整理番号:18A0607609
TiO_2(110)上の中性ドーパントSi,Ge,およびSnの生物活性に及ぼす表面電子構造の影響:DFT研究【Powered by NICT】
The Effect of Surface Electronic Structure on the Bioactivity of Neutral Dopant Si, Ge, and Sn on TiO2 (110): A DFT Study
著者 (5件):
Xu Aoni
(Corrosion and Protection Center, Key Laboratory for Corrosion and Protection (MOE), University of Science and Technology Beijing, Beijing 100083, P.R. China)
,
Dong Chaofang
(Corrosion and Protection Center, Key Laboratory for Corrosion and Protection (MOE), University of Science and Technology Beijing, Beijing 100083, P.R. China)
,
Wei Xin
(Corrosion and Protection Center, Key Laboratory for Corrosion and Protection (MOE), University of Science and Technology Beijing, Beijing 100083, P.R. China)
,
Zhang Yanxian
(Corrosion and Protection Center, Key Laboratory for Corrosion and Protection (MOE), University of Science and Technology Beijing, Beijing 100083, P.R. China)
,
Li Xiaogang
(Corrosion and Protection Center, Key Laboratory for Corrosion and Protection (MOE), University of Science and Technology Beijing, Beijing 100083, P.R. China)
資料名:
Physica Status Solidi. B. Basic Solid State Physics
(Physica Status Solidi. B. Basic Solid State Physics)
巻:
255
号:
3
ページ:
ROMBUNNO.201700185
発行年:
2018年
JST資料番号:
C0599A
ISSN:
0370-1972
CODEN:
PSSBBD
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)