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J-GLOBAL ID:201802252108275442
整理番号:18A0573396
H終端ダイヤモンドにおける2次元ホールガスの移動度【Powered by NICT】
Mobility of Two-Dimensional Hole Gas in H-Terminated Diamond
著者 (6件):
Li Yao
(State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, School of Microelectronics, Xidian University, Xi’an 710071, P. R. China)
,
Zhang Jin-Feng
(State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, School of Microelectronics, Xidian University, Xi’an 710071, P. R. China)
,
Liu Gui-Peng
(Institute of Microelectronics, Key Laboratory for Magnetism and Magnetic Materials of MOE, School of Physical Science and Tech-nology, Lanzhou University, Lanzhou, Gansu 730000, P. R. China)
,
Ren Ze-Yang
(State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, School of Microelectronics, Xidian University, Xi’an 710071, P. R. China)
,
Zhang Jin-Cheng
(State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, School of Microelectronics, Xidian University, Xi’an 710071, P. R. China)
,
Hao Yue
(State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, School of Microelectronics, Xidian University, Xi’an 710071, P. R. China)
資料名:
Physica Status Solidi. Rapid Research Letters
(Physica Status Solidi. Rapid Research Letters)
巻:
12
号:
3
ページ:
ROMBUNNO.201700401
発行年:
2018年
JST資料番号:
W1880A
ISSN:
1862-6254
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)