文献
J-GLOBAL ID:201802252276601996
整理番号:18A1394696
フォトニックデバイス応用のためのZnドーピングによるナノ構造SnO_2薄膜の非線形光学感受率χ(3),光ルミネセンスおよび光学バンドギャップの調整【JST・京大機械翻訳】
Tailoring the nonlinear optical susceptibility χ(3), photoluminescence and optical band gap of nanostructured SnO2 thin films by Zn doping for photonic device applications
著者 (6件):
Bannur M.S.
(Department of Physics, Karnataka Law Society Vishwanathrao Deshpande Rural Institute of Technology, Haliyal, Uttar Kannada Dist, Karnataka, 581329, India)
,
Antony Albin
(Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal, Karnataka, 576104, India)
,
Maddani K.I.
(Department of Physics, Sri Dharmasthala Manjunatheshwar College of Engineering and Technology, Dharwad, Karnataka, 580004, India)
,
Poornesh P.
(Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal, Karnataka, 576104, India)
,
Rao Ashok
(Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal, Karnataka, 576104, India)
,
Choudhari K.S.
(Department of Atomic and Molecular Physics, Manipal Academy of Higher Education, Manipal, Karnataka, 576104, India)
資料名:
Physica E: Low-Dimensional Systems and Nanostructures
(Physica E: Low-Dimensional Systems and Nanostructures)
巻:
103
ページ:
348-353
発行年:
2018年
JST資料番号:
W1066A
ISSN:
1386-9477
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)