文献
J-GLOBAL ID:201802254874489029
整理番号:18A0151015
埋込みPtナノ結晶を用いた成形自由TiO_2~ ベースRRAMにおける増強された均一性を有する超低電力マルチレベルスイッチング【Powered by NICT】
Ultra-Low Power Multilevel Switching with Enhanced Uniformity in Forming Free TiO2-x-Based RRAM with Embedded Pt Nanocrystals
著者 (5件):
Tsigkourakos Menelaos
(Department of Applied Physics National Technical University of Athens, Iroon Polytechniou 9, 15780 Athens, Greece)
,
Bousoulas Panagiotis
(Department of Applied Physics National Technical University of Athens, Iroon Polytechniou 9, 15780 Athens, Greece)
,
Aslanidis Vaggelis
(Department of Applied Physics National Technical University of Athens, Iroon Polytechniou 9, 15780 Athens, Greece)
,
Skotadis Evangelos
(Department of Applied Physics National Technical University of Athens, Iroon Polytechniou 9, 15780 Athens, Greece)
,
Tsoukalas Dimitris
(Department of Applied Physics National Technical University of Athens, Iroon Polytechniou 9, 15780 Athens, Greece)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
214
号:
12
ページ:
ROMBUNNO.201700570
発行年:
2017年
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)