文献
J-GLOBAL ID:201802255375791529
整理番号:18A1932653
マグネトロンスパッタリングにより成長させたGaドープZnO薄膜の電気的性質と組成に及ぼす堆積圧力と基板バイアスの影響に関する深さ内X線光電子分光法と飛行時間二次イオン質量分光法による研究【JST・京大機械翻訳】
Combined in-depth X-ray Photoelectron Spectroscopy and Time-of-Flight Secondary Ion Mass Spectroscopy study of the effect of deposition pressure and substrate bias on the electrical properties and composition of Ga-doped ZnO thin films grown by magnetron sputtering
著者 (7件):
Correia Filipe C.
(Centre of Physics, University of Minho, 4804-533 Guimaraes, Portugal)
,
Ribeiro Joana M.
(Centre of Physics, University of Minho, 4804-533 Guimaraes, Portugal)
,
Salvador Paulo B.
(Centre of Physics, University of Minho, 4804-533 Guimaraes, Portugal)
,
Welle Alexander
(Institute of Functional Interfaces (IFG), and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), D-76344 Eggenstein-Leopoldshafen, Germany)
,
Bruns Michael
(Institute for Applied Materials (IAM), and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), D-76344 Eggenstein-Leopoldshafen, Germany)
,
Mendes Adelio
(LEPABE, Faculty of Engineering of the University of Porto, Rua Roberto Frias s/n, 4200-465 Porto, Portugal)
,
Tavares Carlos J.
(Centre of Physics, University of Minho, 4804-533 Guimaraes, Portugal)
資料名:
Thin Solid Films
(Thin Solid Films)
巻:
665
ページ:
184-192
発行年:
2018年
JST資料番号:
B0899A
ISSN:
0040-6090
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)