文献
J-GLOBAL ID:201802255471825346
整理番号:18A0128562
ストレスセンシング応用のための結晶学的配向に対するn型3C-SiC(100)とその依存性の大きい擬似H all効果【Powered by NICT】
A large pseudo-Hall effect in n-type 3C-SiC(100) and its dependence on crystallographic orientation for stress sensing applications
著者 (6件):
Qamar Afzaal
(Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA)
,
Dinh Toan
(Queensland Micro- and Nanotechnology Centre, Griffith University, Queensland, Australia)
,
Jafari Mohsen
(Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA)
,
Iacopi Alan
(Queensland Micro- and Nanotechnology Centre, Griffith University, Queensland, Australia)
,
Dimitrijev Sima
(Queensland Micro- and Nanotechnology Centre, Griffith University, Queensland, Australia)
,
Dao Dzung Viet
(Queensland Micro- and Nanotechnology Centre, Griffith University, Queensland, Australia)
資料名:
Materials Letters
(Materials Letters)
巻:
213
ページ:
11-14
発行年:
2018年
JST資料番号:
E0935A
ISSN:
0167-577X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)