文献
J-GLOBAL ID:201802256470187779
整理番号:18A1378428
P-113:量子ドット発光ダイオードにおけるハイブリッド正孔輸送層と電子ブロッキング層によるキャリアバランスの改善【JST・京大機械翻訳】
P-113: Improving the Carrier Balance with Hybrid Hole Transporting Layer and Electron Blocking Layer in Quantum Dot Light-Emitting Diodes
著者 (5件):
Dong Dan
(National Engineering Lab for TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China)
,
Lian Lu
(National Engineering Lab for TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China)
,
Feng Dongxu
(National Engineering Lab for TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China)
,
Wang Han
(National Engineering Lab for TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China)
,
He Gufeng
(National Engineering Lab for TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China)
資料名:
Digest of Technical Papers. SID International Symposium (Society for Information Display)
(Digest of Technical Papers. SID International Symposium (Society for Information Display))
巻:
49
号:
1
ページ:
1636-1639
発行年:
2018年
JST資料番号:
E0907A
ISSN:
0097-966X
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)