文献
J-GLOBAL ID:201802256511215267
整理番号:18A0471786
(Ag,Cu)(In,Ga)Se_2太陽電池における透明裏面接触としての水素ドープIn_2O_3膜を用いた【Powered by NICT】
Using hydrogen-doped In2O3 films as a transparent back contact in (Ag,Cu)(In,Ga)Se2 solar cells
著者 (7件):
Keller Jan
(Ångstrom Solar Center, Division of Solid State Electronics, Uppsala University, PO Box 534, SE-75121, Uppsala, Sweden)
,
Shariati Nilsson Nina
(Ångstrom Solar Center, Division of Solid State Electronics, Uppsala University, PO Box 534, SE-75121, Uppsala, Sweden)
,
Aijaz Asim
(Ångstrom Solar Center, Division of Solid State Electronics, Uppsala University, PO Box 534, SE-75121, Uppsala, Sweden)
,
Riekehr Lars
(Ångstrom Solar Center, Division of Solid State Electronics, Uppsala University, PO Box 534, SE-75121, Uppsala, Sweden)
,
Kubart Tomas
(Ångstrom Solar Center, Division of Solid State Electronics, Uppsala University, PO Box 534, SE-75121, Uppsala, Sweden)
,
Edoff Marika
(Ångstrom Solar Center, Division of Solid State Electronics, Uppsala University, PO Box 534, SE-75121, Uppsala, Sweden)
,
Torndahl Tobias
(Ångstrom Solar Center, Division of Solid State Electronics, Uppsala University, PO Box 534, SE-75121, Uppsala, Sweden)
資料名:
Progress in Photovoltaics
(Progress in Photovoltaics)
巻:
26
号:
3
ページ:
159-170
発行年:
2018年
JST資料番号:
W0463A
ISSN:
1062-7995
CODEN:
PPHOED
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)