文献
J-GLOBAL ID:201802257428799884
整理番号:18A1805394
4H-SiCにおける貫通転位の二光子励起,三次元光ルミネセンス撮像および転位線解析【JST・京大機械翻訳】
Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC
著者 (4件):
Tanuma R.
(Materials Science Research Laboratory, Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan)
,
Kamata I.
(Materials Science Research Laboratory, Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan)
,
Hadorn J. P.
(Materials Science Research Laboratory, Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan)
,
Tsuchida H.
(Materials Science Research Laboratory, Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
124
号:
12
ページ:
125703-125703-9
発行年:
2018年
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)