文献
J-GLOBAL ID:201802257735533427
整理番号:18A0706496
BREINメモリ:0.6Wで1.4トップを達成する単一チップ二値/三元再構成可能なメモリ深部神経回路網加速器【JST・京大機械翻訳】
BRein Memory: A Single-Chip Binary/Ternary Reconfigurable in-Memory Deep Neural Network Accelerator Achieving 1.4 TOPS at 0.6 W
著者 (11件):
Ando Kota
(Graduate School of Information Science and Technology, Hokkaido University, Sapporo, Japan)
,
Ueyoshi Kodai
(Graduate School of Information Science and Technology, Hokkaido University, Sapporo, Japan)
,
Orimo Kentaro
(Graduate School of Information Science and Technology, Hokkaido University, Sapporo, Japan)
,
Yonekawa Haruyoshi
(Department of Information and Communications Engineering, School of Engineering, Tokyo Institute of Technology, Tokyo, Japan)
,
Sato Shimpei
(Department of Information and Communications Engineering, School of Engineering, Tokyo Institute of Technology, Tokyo, Japan)
,
Nakahara Hiroki
(Department of Information and Communications Engineering, School of Engineering, Tokyo Institute of Technology, Tokyo, Japan)
,
Takamaeda-Yamazaki Shinya
(Graduate School of Information Science and Technology, Hokkaido University, Sapporo, Japan)
,
Ikebe Masayuki
(Graduate School of Information Science and Technology, Hokkaido University, Sapporo, Japan)
,
Asai Tetsuya
(Graduate School of Information Science and Technology, Hokkaido University, Sapporo, Japan)
,
Kuroda Tadahiro
(Department of Electronics and Electrical Engineering, Keio University, Yokohama, Japan)
,
Motomura Masato
(Graduate School of Information Science and Technology, Hokkaido University, Sapporo, Japan)
資料名:
IEEE Journal of Solid-State Circuits
(IEEE Journal of Solid-State Circuits)
巻:
53
号:
4
ページ:
983-994
発行年:
2018年
JST資料番号:
B0761A
ISSN:
0018-9200
CODEN:
IJSCBC
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)