文献
J-GLOBAL ID:201802258010191480
整理番号:18A0237529
角度分解光電子分光法による異方性ナローギャップ半導体における遍歴キャリアの証拠【Powered by NICT】
Evidence for Itinerant Carriers in an Anisotropic Narrow-Gap Semiconductor by Angle-Resolved Photoemission Spectroscopy
著者 (13件):
Ju Sailong
(National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui, 230029, P. R. China)
,
Bai Wei
(Hefei National Laboratory for Physical Sciences at the Microscale, iCHEM, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China)
,
Wu Liming
(Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, P. R. China)
,
Lin Hua
(Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, P. R. China)
,
Xiao Chong
(Hefei National Laboratory for Physical Sciences at the Microscale, iCHEM, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China)
,
Cui Shengtao
(National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui, 230029, P. R. China)
,
Li Zhou
(Hefei National Laboratory for Physical Sciences at the Microscale, iCHEM, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China)
,
Kong Shuai
(National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui, 230029, P. R. China)
,
Liu Yi
(National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui, 230029, P. R. China)
,
Liu Dayong
(Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P. O. Box 1129, Hefei, Anhui, 230031, P. R. China)
,
Zhang Guobin
(National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui, 230029, P. R. China)
,
Sun Zhe
(National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui, 230029, P. R. China)
,
Xie Yi
(Hefei National Laboratory for Physical Sciences at the Microscale, iCHEM, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China)
資料名:
Advanced Materials
(Advanced Materials)
巻:
30
号:
2
ページ:
ROMBUNNO.201704733
発行年:
2018年
JST資料番号:
W0001A
ISSN:
0935-9648
CODEN:
ADVMEW
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)