文献
J-GLOBAL ID:201802258466556680
整理番号:18A2043876
異なるパワーでRFマグネトロンスパッタリングにより作製した酸素欠損酸化スズ膜の堆積と電気抵抗率【JST・京大機械翻訳】
Deposition and Electrical Resistivity of Oxygen-Deficient Tin Oxide Films Prepared by RF Magnetron Sputtering at Different Powers
著者 (4件):
Wang Qi
(China University of Geosciences (Beijing), Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology,; Beijing, China, 100083)
,
Peng Zhi Jian
(China University of Geosciences, School of Engineering and Technology; Beijing, China, 100083)
,
Wang Yang
(China University of Geosciences, School of Engineering and Technology; Beijing, China, 100083)
,
Fu Xiu Li
(Beijing University of Posts and Telecommunications, School of Science; Beijing, China, 100876)
資料名:
Solid State Phenomena
(Solid State Phenomena)
巻:
281
ページ:
504-509
発行年:
2018年
JST資料番号:
T0583A
ISSN:
1012-0394
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
スイス (CHE)
言語:
英語 (EN)