文献
J-GLOBAL ID:201802258877722472
整理番号:18A2042290
4H-SiC基板上の薄化過程後の応力緩和機構【JST・京大機械翻訳】
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate
著者 (7件):
Anzalone Ruggero
(ST-Microelectronics; Stradale Primosole, 50, Catania, 95121, Italy)
,
Piluso Nicolo
(ST-Microelectronics; Stradale Primosole, 50, Catania, 95121, Italy)
,
Litrico Grazia
(Laboratori Nazionali del Sud; via S. Sofia, 62, Catania, 95123, Italy)
,
Lorenti Simona
(ST-Microelectronics; Stradale Primosole, 50, Catania, 95121, Italy)
,
Arena Giuseppe
(ST-Microelectronics; Stradale Primosole, 50, Catania, 95121, Italy)
,
Coffa Salvatore
(ST-Microelectronics; Stradale Primosole, 50, Catania, 95121, Italy)
,
La Via Francesco
(CNR-IMM; Strada VIII 5, Catania, 95121, Italy)
資料名:
Materials Science Forum
(Materials Science Forum)
巻:
924
ページ:
535-538
発行年:
2018年
JST資料番号:
D0716B
ISSN:
0255-5476
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
スイス (CHE)
言語:
英語 (EN)