文献
J-GLOBAL ID:201802259375403444
整理番号:18A0618036
非クランプ型誘導性スイッチストレス下の大電流を有するスプリットゲートトレンチMOSFETのための新しい故障機構と改善【Powered by NICT】
Novel failure mechanism and improvement for split-gate trench MOSFET with large current under unclamped inductive switch stress
著者 (9件):
Tian Ye
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
,
Yang Zhuo
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
,
Xu Zhiyuan
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
,
Liu Siyang
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
,
Sun Weifeng
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
,
Shi Longxing
(National ASIC System Engineering Research Center, Southeast University, Nanjing, China)
,
Zhu Yuanzheng
(WUXI NCE Power CO., LTD., Wuxi, China)
,
Ye Peng
(WUXI NCE Power CO., LTD., Wuxi, China)
,
Zhou Jincheng
(WUXI NCE Power CO., LTD., Wuxi, China)
資料名:
Superlattices and Microstructures
(Superlattices and Microstructures)
巻:
116
ページ:
151-163
発行年:
2018年
JST資料番号:
D0600B
ISSN:
0749-6036
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)