文献
J-GLOBAL ID:201802259566055834
整理番号:18A0195712
スイッチング層工学に基づくrFPGA応用のための高Roff/Ron比とフォーミングフリーRRAMを示す【Powered by NICT】
Demonstrate high Roff/Ron ratio and forming-free RRAM for rFPGA application based on switching layer engineering
著者 (5件):
Dong Wenfeng
(College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China)
,
Liu Dong
(Polytechnic Institute, Zhejiang University, Hangzhou 310027, China)
,
Xu Shun
(College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China)
,
Chen Bing
(College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China)
,
Zhao Yi
(College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
ASICON
ページ:
851-854
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)