文献
J-GLOBAL ID:201802259578946804
整理番号:18A0969015
Mn濃度に依存するMnドープZnSnAs_2薄膜の磁気相変化【JST・京大機械翻訳】
Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration
著者 (5件):
Uchitomi Naotaka
(Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan)
,
Hidaka Shiro
(School of Science, Osaka University, 1-1 Yamadaoka, Suita, Osaka 565-0871, Japan)
,
Saito Shin
(Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan)
,
Asubar Joel T.
(Department of Electrical and Electronics Engineering, University of Fukui 3-9-1 Bunkyo, Fukui-shi, Fukui 910-8507, Japan)
,
Toyota Hideyuki
(Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
123
号:
16
ページ:
161566-161566-7
発行年:
2018年
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)