文献
J-GLOBAL ID:201802260430916087
整理番号:18A1488436
SIPOSピラーを用いた新しいパワーU-MOSFET【JST・京大機械翻訳】
Novel power U-MOSFET with SIPOS pillars
著者 (7件):
Cao Zhen
(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China)
,
Duan Baoxing
(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China)
,
Guo Haijun
(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China)
,
Song Haitao
(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China)
,
Dong Ziming
(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China)
,
Shi Tongtong
(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China)
,
Yang Yintang
(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
87
ページ:
86-91
発行年:
2018年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)