文献
J-GLOBAL ID:201802260536050455
整理番号:18A1046945
抵抗スイッチングランダムアクセスメモリのマルチレベルセルに基づく不揮発性ルックアップテーブル演算の応用【JST・京大機械翻訳】
The application of non-volatile look-up-table operations based on multilevel-cell of resistance switching random access memory
著者 (8件):
Zhang Feng
(Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China, 100029)
,
Fan Dong-Yu
(Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China, 100029)
,
Lin Qi-Peng
(Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China, 100029)
,
Huo Qiang
(Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China, 100029)
,
Li Yun
(Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China, 100029)
,
Dai Lan
(North China University of Technology, Beijing, China, 100144)
,
Chen Cheng-Ying
(Xiamen university of technology, Xiamen, China, 361024)
,
Shen Hai-Hua
(University of Chinese Academy of Sciences, Beijing, China, 100049)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2018
号:
VLSI-DAT
ページ:
1-4
発行年:
2018年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)