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J-GLOBAL ID:201802261438265104
整理番号:18A0438763
インジウム ガリウムのフッ素化と酸化に関する比較研究 亜鉛酸化物薄膜トランジスタ【Powered by NICT】
A Comparative Study on Fluorination and Oxidation of Indium-Gallium-Zinc Oxide Thin-Film Transistors
著者 (7件):
Lu Lei
(Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology (HKUST), Hong Kong)
,
Xia Zhihe
(Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong)
,
Li Jiapeng
(Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong)
,
Feng Zhuoqun
(Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong)
,
Wang Sisi
(Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong)
,
Kwok Hoi Sing
(Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology (HKUST), Hong Kong)
,
Wong Man
(Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
39
号:
2
ページ:
196-199
発行年:
2018年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)