文献
J-GLOBAL ID:201802261568031816
整理番号:18A0722136
プラズマ形成概念を用いたドープTFETの性能改善【JST・京大機械翻訳】
Performance improvement of doped TFET by using plasma formation concept
著者 (5件):
Soni Deepak
(Nanoelectronics and VLSI Lab., Electronics and Communication Engineering Discipline, PDPM Indian Institute of Information Technology, Design & Manufacturing, Jabalpur, 482005, India)
,
Sharma Dheeraj
(Nanoelectronics and VLSI Lab., Electronics and Communication Engineering Discipline, PDPM Indian Institute of Information Technology, Design & Manufacturing, Jabalpur, 482005, India)
,
Yadav Shivendra
(Nanoelectronics and VLSI Lab., Electronics and Communication Engineering Discipline, PDPM Indian Institute of Information Technology, Design & Manufacturing, Jabalpur, 482005, India)
,
Aslam Mohd.
(Nanoelectronics and VLSI Lab., Electronics and Communication Engineering Discipline, PDPM Indian Institute of Information Technology, Design & Manufacturing, Jabalpur, 482005, India)
,
Sharma Neeraj
(Department of Computer Engineering, Ramrao Adik Institute of Technology, Nerul, Navi, Mumbai, India)
資料名:
Superlattices and Microstructures
(Superlattices and Microstructures)
巻:
113
ページ:
97-109
発行年:
2018年
JST資料番号:
D0600B
ISSN:
0749-6036
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)