文献
J-GLOBAL ID:201802261821321291
整理番号:18A0967990
規則化InAs/GaAs(001)量子ドット成長のためのその場レーザナノパターニング【JST・京大機械翻訳】
In-situ laser nano-patterning for ordered InAs/GaAs(001) quantum dot growth
著者 (9件):
Zhang Wei
(College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China)
,
Shi Zhenwu
(College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China)
,
Huo Dayun
(College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China)
,
Guo Xiaoxiang
(College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China)
,
Zhang Feng
(College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China)
,
Chen Linsen
(College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China)
,
Wang Qinhua
(College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China)
,
Zhang Baoshun
(Suzhou Institute of Nano Tech and Nano Bionics, Chinese Academy of Science, Suzhou 215123, China)
,
Peng Changsi
(College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
112
号:
15
ページ:
153108-153108-4
発行年:
2018年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)