文献
J-GLOBAL ID:201802261822111275
整理番号:18A0706609
a-IGZO TFTの性能に及ぼすCu電極の障壁層としてのITOの影響【JST・京大機械翻訳】
Effect of ITO Serving as a Barrier Layer for Cu Electrodes on Performance of a-IGZO TFT
著者 (10件):
Hu Shiben
(State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, China)
,
Lu Kuankuan
(State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, China)
,
Ning Honglong
(State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, China)
,
Fang Zhiqiang
(State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou, China)
,
Liu Xianzhe
(State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, China)
,
Xie Weiguang
(Department of Physics and Department of Electronic Engineering, Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Jinan University, Guangzhou, China)
,
Yao Rihui
(State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, China)
,
Zou Jianhua
(State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, China)
,
Xu Miao
(State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, China)
,
Peng Junbiao
(State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
39
号:
4
ページ:
504-507
発行年:
2018年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)