文献
J-GLOBAL ID:201802262722231628
整理番号:18A0813934
ひ化ガリウムヘテロエピタキシャル成長のためのコンプライアント基板としての絶縁体上の超薄シリコンに及ぼすシリコン厚さの影響の研究【JST・京大機械翻訳】
Investigating the effect of silicon thickness on ultra-thin silicon on insulator as a compliant substrate for gallium arsenide heteroepitaxial growth
著者 (6件):
Noh Shinyoung
(School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052, Australia)
,
Hao Xiaojing
(School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052, Australia)
,
Liu Ziheng
(School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052, Australia)
,
Green Martin A.
(School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052, Australia)
,
Lee Sammy
(School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052, Australia)
,
Ho-Baillie Anita
(School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052, Australia)
資料名:
Thin Solid Films
(Thin Solid Films)
巻:
653
ページ:
371-376
発行年:
2018年
JST資料番号:
B0899A
ISSN:
0040-6090
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)