文献
J-GLOBAL ID:201802263559122331
整理番号:18A0159576
ゲートバイアスと光照射ストレスの下での金属-酸化物薄膜トランジスタのための物理モデル【Powered by NICT】
A Physical Model for Metal-Oxide Thin-Film Transistor Under Gate-Bias and Illumination Stress
著者 (5件):
Li Jiapeng
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
,
Lu Lei
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
,
Chen Rongsheng
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
,
Kwok Hoi-Sing
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
,
Wong Man
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
65
号:
1
ページ:
142-149
発行年:
2018年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)