文献
J-GLOBAL ID:201802264456158729
整理番号:18A0265848
異なるMgドープp-GaNに適した異なるアニーリング温度【Powered by NICT】
Different annealing temperature suitable for different Mg doped P-GaN
著者 (14件):
Liu S.T.
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China)
,
Yang J.
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China)
,
Zhao D.G.
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China)
,
Zhao D.G.
(School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China)
,
Jiang D.S.
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China)
,
Liang F.
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China)
,
Chen P.
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China)
,
Zhu J.J.
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China)
,
Liu Z.S.
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China)
,
Li X.
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China)
,
Liu W.
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People’s Republic of China)
,
Zhang L.Q.
(Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, People’s Republic of China)
,
Long H.
(State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, People’s Republic of China)
,
Li M.
(State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, People’s Republic of China)
資料名:
Superlattices and Microstructures
(Superlattices and Microstructures)
巻:
104
ページ:
63-68
発行年:
2017年
JST資料番号:
D0600B
ISSN:
0749-6036
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)