文献
J-GLOBAL ID:201802264462331869
整理番号:18A0194176
SiGe BiCMOS技術におけるシングルイベント過渡現象の軽減のための静電放電保護回路技術【Powered by NICT】
An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology
著者 (8件):
Cho Moon-Kyu
(School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA)
,
Song Ickhyun
(School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA)
,
Pavlidis Spyridon
(School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, USA)
,
Fleetwood Zachary E.
(School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA)
,
Buchner Stephen P.
(Naval Research Laboratory, Washington, DC, USA)
,
McMorrow Dale
(Naval Research Laboratory, Washington, DC, USA)
,
Paki Pauline
(Defense Threat Reduction Agency, Fort Belvoir, VA, USA)
,
Cressler John D.
(School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA)
資料名:
IEEE Transactions on Nuclear Science
(IEEE Transactions on Nuclear Science)
巻:
65
号:
1
ページ:
426-431
発行年:
2018年
JST資料番号:
C0235A
ISSN:
0018-9499
CODEN:
IETNAE
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)