文献
J-GLOBAL ID:201802265326074297
整理番号:18A0239605
室温マルチフェロイックGa_xFe_2-xO_3エピタキシャル薄膜における強誘電性と磁気的性質【Powered by NICT】
Ferroelectric and Magnetic Properties in Room-Temperature Multiferroic GaxFe2- xO3 Epitaxial Thin Films
著者 (7件):
Katayama Tsukasa
(Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259-J2-19, Nagatsuta-cho, Midori-ku, Yokohama, 226-8503, Japan)
,
Yasui Shintaro
(Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259-J2-19, Nagatsuta-cho, Midori-ku, Yokohama, 226-8503, Japan)
,
Hamasaki Yosuke
(Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259-J2-19, Nagatsuta-cho, Midori-ku, Yokohama, 226-8503, Japan)
,
Shiraishi Takahisa
(Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, 980-8577, Japan)
,
Akama Akihiro
(Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, 980-8577, Japan)
,
Kiguchi Takenori
(Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, 980-8577, Japan)
,
Itoh Mitsuru
(Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259-J2-19, Nagatsuta-cho, Midori-ku, Yokohama, 226-8503, Japan)
資料名:
Advanced Functional Materials
(Advanced Functional Materials)
巻:
28
号:
2
ページ:
ROMBUNNO.201704789
発行年:
2018年
JST資料番号:
W1336A
ISSN:
1616-301X
CODEN:
AFMDC6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)