文献
J-GLOBAL ID:201802266074805152
整理番号:18A0388094
強磁性GaMnAs薄膜に対する電子照射の均一アニーリング効果【Powered by NICT】
Uniform annealing effect of electron irradiation on ferromagnetic GaMnAs thin films
著者 (10件):
Luo Jia
(College of Physical Science and Technology, Sichuan University, Chengdu 610064, China)
,
Luo Jia
(Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, China)
,
Xiang Gang
(College of Physical Science and Technology, Sichuan University, Chengdu 610064, China)
,
Xiang Gang
(Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, China)
,
Gu Gangxu
(College of Physical Science and Technology, Sichuan University, Chengdu 610064, China)
,
Gu Gangxu
(Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, China)
,
Zhang Xi
(College of Physical Science and Technology, Sichuan University, Chengdu 610064, China)
,
Zhang Xi
(Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, China)
,
Wang Hailong
(State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Zhao Jianhua
(State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
資料名:
Journal of Magnetism and Magnetic Materials
(Journal of Magnetism and Magnetic Materials)
巻:
422
ページ:
124-127
発行年:
2017年
JST資料番号:
H0644A
ISSN:
0304-8853
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)