文献
J-GLOBAL ID:201802266181318226
整理番号:18A0160127
ゾル-ゲル合成近赤外センサのためのCuOフォトトランジスタのp型【Powered by NICT】
Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor
著者 (8件):
Lee Sojeong
(School of Electronics Engineering, Kyungpook National University, Daegu, South Korea)
,
Lee Won-Yong
(School of Electronics Engineering, Kyungpook National University, Daegu, South Korea)
,
Jang Bongho
(School of Electronics Engineering, Kyungpook National University, Daegu, South Korea)
,
Kim Taegyun
(School of Electronics Engineering, Kyungpook National University, Daegu, South Korea)
,
Bae Jin-Hyuk
(School of Electronics Engineering, Kyungpook National University, Daegu, South Korea)
,
Cho Kyoungah
(Department of Electrical Engineering, Korea University, Seoul, South Korea)
,
Kim Sangsig
(Department of Electrical Engineering, Korea University, Seoul, South Korea)
,
Jang Jaewon
(School of Electronics Engineering, Kyungpook National University, Daegu, South Korea)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
39
号:
1
ページ:
47-50
発行年:
2018年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)